sot-23 plastic-encapsulate transistors s9013 transistor (npn) features z high collector current. z complementary to s9012. z excellent h fe linearity. marking: j3 maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 40 v v ceo collector-emitter voltage 25 v v ebo emitter-base voltage 5 v i c collector current 500 ma p c collector power dissipation 300 mw r ja thermal resistance from junction to ambient 416 /w t j junction temperature 150 t stg storage temperature -55 +150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =0.1ma, i e =0 40 v collector-emitter breakdown voltage v (br)ceo i c =1ma, i b =0 25 v emitter-base breakdown voltage v (br)ebo i e =0.1ma, i c =0 5 v collector cut-off current i cbo v cb =40v, i e =0 0.1 ua collector cut-off current i ceo v ce =20v, i b =0 0.1 ua emitter cut-off current i ebo v eb =5v, i c =0 0.1 ua h fe(1) v ce =1v, i c =50ma 120 400 dc current gain h fe(2) v ce =1v, i c =500ma 40 collector-emitter saturation voltage v ce(sat) i c =500ma, i b =50ma 0.6 v base-emitter saturation voltage v be(sat) i c =500ma, i b =50ma 1.2 v base-emitter voltage v be v cb =1v,i c =10ma, 0.7 v transition frequency f t v ce =6v,i c =20ma, f=30mhz 150 mhz collector output capacitance c ob v cb =6v, i e =0, f=1mhz 8 pf classification of h fe(1) rank l h j range 120-200 200- 350 300-400 sot C 23 1. base 2. emitter 3. collector 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
1 10 100 10 100 1000 1 10 100 10 100 0.1 1 10 1 100 10 100 1000 0 25 50 75 100 125 150 0 100 200 300 400 0.0 0.2 0.4 0.6 0.8 1.0 0.1 1 10 100 1 10 100 0.0 0.4 0.8 1.2 0481 21 62 0 0 20 40 60 80 100 f t ?? i c h fe ?? common emitter v ce =1v 3 30 500 t a =100 t a =25 dc current gain h fe collector current i c (ma) i c 30 300 30 3 collector-emitter saturation voltage v cesat (mv) collector current i c (ma) =10 t a =25 t a =100 i c v cesat ?? 500 500 100 30 10 3 3 0.3 20 c ob c ib reverse voltage v (v) f=1mhz i e =0/ i c =0 t a =25 v cb / v eb c ob / c ib ?? capacitance c (pf) 300 10 30 v ce =6v t a =25 transition frequency f t (mhz) collector current i c (ma) s9013 collector power dissipation p c (mw) ambient temperature t a ( ) p c ?? t a v be i c ?? 30 3 0.3 t a =25 t a =100 common emitter v ce =1v collector current i c (ma) base-emmiter voltage v be (v) 30 3 =10 base-emitter saturation voltage v besat (v) collector current i c (ma) t a =25 t a =100 500 i c v besat ?? static characteristic collector current i c (ma) collector-emitter voltage v ce (v) 400ua 350ua 300ua 250ua 200ua 150ua 100ua i b =50ua common emitter t a =25 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,nov,2011
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